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Fourth generation switching power supply for circular induction accelerators
Yi Liu1, Katsuya Okamura2, Ken Takayama2
1Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China.
A new generation of switching power supplies (SPS) utilizing advanced silicon carbide MOSFETs enhances particle acceleration in circular accelerators. This improved SPS system achieves higher output and better thermal management for demanding applications.
Area of Science:
- High Energy Physics
- Accelerator Technology
- Power Electronics
Background:
- Switching power supplies (SPS) are crucial for high-voltage pulse generation in circular accelerators like induction synchrotrons.
- Previous SPS generations powered novel accelerators proposed at KEK since 2006.
Purpose of the Study:
- To develop a fourth-generation SPS for circular induction accelerators.
- To incorporate high-speed silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) for improved performance.
- To enhance thermal management and operational monitoring capabilities.
Main Methods:
- Utilized newly developed 3.3 kV SiC MOSFETs in a parallel configuration for heat dissipation.
- Optimized bus patterns to reduce parasitic capacitance and improve drain-source voltage (VDS) balance.
- Integrated current sampling circuits for operational status monitoring.
Main Results:
- The new SPS achieved a 2.5 kV-17.4 A bipolar output at 350 kHz in continuous mode.
- The highest MOSFET junction temperature was recorded at 98°C, indicating effective thermal management.
- Demonstrated improved VDS balance and efficient heat shunting.
Conclusions:
- The fourth-generation SPS represents a significant advancement in power supply technology for particle accelerators.
- The use of SiC MOSFETs and optimized design ensures reliable and efficient operation at high frequencies and voltages.
- This technology is suitable for large-scale accelerator applications requiring precise pulse generation.
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