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Published on: December 5, 2015
Thickness-Dependent Dielectric Screening in Few-Layer Phosphorus.
Chengxiang Chen1, Zhenyu Wang1, Bo Zhang1,2
1Center of Nanomaterials for Renewable Energy, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
We measured dielectric screening in black phosphorus (BP) and violet phosphorus (VP) using Kelvin probe force microscopy. Dielectric constants saturate with thickness, but VP shows weaker layer dependence due to strong interlayer coupling.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Dielectric screening is crucial for semiconductor electronic properties.
- Layered 2D materials like black phosphorus (BP) and violet phosphorus (VP) are promising for nanoelectronic devices.
Purpose of the Study:
- To investigate the thickness-dependent dielectric screening of BP and VP.
- To understand the factors influencing dielectric screening in these 2D materials.
Main Methods:
- Utilized Kelvin probe force microscopy (KPFM) for noncontact, spatially resolved dielectric screening measurements.
- Performed first-principles calculations to validate experimental findings.
Main Results:
- Observed a monotonic increase and saturation of the dielectric constant with flake thickness for both BP and VP.
- Found that VP exhibits weaker dielectric screening dependence on layer number compared to BP.
- Attributed VP's behavior to strong interlayer coupling via electron orbital overlap.
Conclusions:
- The study provides fundamental insights into dielectric screening in layered 2D materials.
- Results are significant for the development of advanced nanoelectronic devices utilizing BP and VP.
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