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Related Concept Videos

Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

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When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
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IR Absorption Frequency: Hybridization01:21

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Hydrocarbons such as alkanes, alkenes, and alkynes show characteristic C–H stretching absorption bands. These IR stretching frequencies depend on the hybridization of the involved carbon atom and can be explained in terms of the s character of each hybridized atomic orbital.
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...
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IR Spectroscopy: Molecular Vibration Overview01:24

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When Infrared (IR) radiation passes through a covalently bonded molecule, the bonds transition from lower to higher vibrational levels. The fundamental vibrational motions that result in infrared absorption can be classified as stretching or bending vibrations.
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IR Spectrometers

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There are two main infrared (IR) spectrophotometers: dispersive IR spectrometers and Fourier transform infrared (FTIR) spectrometers. In a dispersive IR spectrometer, a beam of infrared radiation produced by a hot wire is divided into two parallel equal-intensity beams using mirrors. One beam passes through the sample, while another is a reference beam. The beams then move through the monochromator, which separates the radiations into a continuous spectrum of different frequencies. The...
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In Ultraviolet–Visible (UV–Vis) spectroscopy, the absorption of electromagnetic radiation is used to probe the electronic structure of molecules. This technique provides insights into molecular electronic transitions, particularly the movement of electrons between different molecular orbitals. Radiation is absorbed if the energy of the electromagnetic radiation passing through the molecule is precisely equal to the energy difference between the excited and ground states. During this...
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IR Absorption Frequency: Delocalization01:04

IR Absorption Frequency: Delocalization

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Electron delocalization refers to the distribution of electrons across multiple atoms within a molecule rather than being confined to a single atom or bond. This phenomenon is common in systems with conjugated bonds—structures where alternating single and double bonds allow π-electrons to move freely across the network. The movement of electrons stabilizes the molecule and can affect various chemical properties, including vibrational frequencies observed in IR spectroscopy.
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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Infrared sensitive mixed phase of V7O16 and V2O5 thin-films.

Anchal Rana1, Aditya Yadav2, Govind Gupta2

  • 1Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University Sidhrawali Gurugram-122413 Haryana India rana.abhimanyu@gmail.com.

RSC Advances
|May 24, 2023
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We developed infrared-sensitive vanadium oxide films using cathodic vacuum arc-deposition. These mixed V7O16 and V2O5 films show tunable properties with annealing, offering potential for optical applications.

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Area of Science:

  • Materials Science
  • Thin Film Technology
  • Semiconductor Physics

Background:

  • Vanadium oxides (V_xO_y) exhibit diverse electrical and optical properties.
  • Controlling the phase and defect chemistry is crucial for tailoring their functionality.
  • Low-temperature deposition methods are desirable for flexible substrate compatibility.

Purpose of the Study:

  • To investigate the formation and properties of mixed V7O16 and V2O5 thin films.
  • To understand the influence of annealing temperature on phase composition and material characteristics.
  • To elucidate the mechanisms behind the infrared sensitivity and optical-electrical property correlations.

Main Methods:

  • Cathodic vacuum arc-deposition for thin film growth.
  • Post-annealing treatments at various temperatures (300-450 °C).
  • Raman spectroscopy, optical transmission, photoluminescence (PL), and time-resolved photoluminescence (TRPL) measurements.

Main Results:

  • Stabilization of a mixed V7O16 and V2O5 phase achieved via post-annealing between 300-400 °C.
  • Complete conversion to V2O5 observed at higher annealing temperatures (~450 °C).
  • Increased V2O5 content correlated with higher optical transmission, lower electrical conductivity, and reduced optical bandgap.
  • Defect roles (oxygen vacancies) identified through PL and TRPL, explaining property variations.
  • Infrared sensitivity attributed to plasmonic absorption in the V7O16 degenerate semiconductor phase.

Conclusions:

  • Mixed V7O16 and V2O5 thin films can be controllably synthesized at low temperatures.
  • Annealing provides a route to tune the phase composition and optical-electrical properties.
  • The observed IR sensitivity is linked to the plasmonic behavior of the V7O16 phase, suggesting potential for IR detector applications.