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Updated: Jul 29, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots
Ricky Dwi Septianto1,2, Retno Miranti1, Tomoka Kikitsu1
1RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan.
Abstract:
Semiconducting colloidal quantum dots and their assemblies exhibit superior optical properties owing to the quantum confinement effect. Thus, they are attracting tremendous interest from fundamental research to commercial applications. However, the electrical conducting properties remain detrimental predominantly due to the orientational disorder of quantum dots in the assembly. Here we report high conductivity and the consequent metallic behaviour of semiconducting colloidal quantum dots of lead sulphide. Precise facet orientation control to forming highly-ordered quasi-2-dimensional epitaxially-connected quantum dot superlattices is vital for high conductivity. The intrinsically high mobility over 10 cm2 V-1 s-1 and temperature-independent behaviour proved the high potential of semiconductor quantum dots for electrical conducting properties. Furthermore, the continuously tunable subband filling will enable quantum dot superlattices to be a future platform for emerging physical properties investigations, such as strongly correlated and topological states, as demonstrated in the moiré superlattices of twisted bilayer graphene.
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