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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Tunable Non-Markovianity for Bosonic Quantum Memristors
Jia-Liang Tang1, Gabriel Alvarado Barrios2, Enrique Solano2
1International Center of Quantum Artificial Intelligence for Science and Technology (QuArtist), Physics Department, Shanghai University, Shanghai 200444, China.
Entropy (Basel, Switzerland)
|May 27, 2023
Summary
We demonstrate tunable control over quantum system memory effects by coupling a bosonic mode to auxiliary qubits. This control engineers quantum memristors for neuromorphic quantum technologies.
Area of Science:
- Quantum optics
- Quantum information science
- Condensed matter physics
Background:
- Non-Markovian dynamics are crucial for quantum technologies, but controlling them remains challenging.
- Auxiliary systems can influence the memory properties of quantum states.
Purpose of the Study:
- To investigate the tunable control of non-Markovianity in a bosonic mode coupled to auxiliary qubits within a thermal reservoir.
- To explore the potential of this control for engineering quantum memristors.
Main Methods:
- Utilized the Tavis-Cummings model to describe a single cavity mode coupled to auxiliary qubits.
- Defined and quantified dynamical non-Markovianity as a measure of system state return.
- Analyzed the influence of qubit frequency on non-Markovian dynamics.
Main Results:
- Demonstrated that controlling auxiliary qubits effectively modifies the cavity dynamics via a time-dependent decay rate.
- Showcased the tunability of this decay rate through qubit frequency manipulation.
- Established a method for engineering bosonic quantum memristors.
Conclusions:
- Auxiliary qubit coupling provides a viable mechanism for controlling non-Markovianity in quantum systems.
- The engineered quantum memristors exhibit memory effects essential for advancing neuromorphic quantum computing.
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