Atomic Layer Etching Using a Novel Radical Generation Module

Area of Science:

• Materials Science
• Chemical Engineering
• Semiconductor Manufacturing

Background:

• Fabricating semiconductors below 10 nm faces physical limits with conventional plasma etching.
• Existing methods like plasma etching cause surface damage and profile distortion.
• Atomic Layer Etching (ALE) is a promising alternative for precise semiconductor fabrication.

Purpose of the Study:

• To develop and apply a novel radical generation module for enhanced Atomic Layer Etching (ALE).
• To address limitations of conventional etching techniques in semiconductor miniaturization.
• To improve the efficiency and reproducibility of ALE processes.

Main Methods:

• Development of a new radical generation module for ALE.
• Integration of the module into the ALE process.
• Evaluation of adsorption time, process reproducibility, and etch rate per cycle.

Main Results:

• Reduced adsorption time to 5 seconds using the new module.
• Demonstrated high process reproducibility over 40 cycles.
• Achieved a consistent etch per cycle of 0.11 nm/cycle.

Conclusions:

• The developed radical generation module significantly improves ALE efficiency.
• This technology offers a viable solution for advanced semiconductor miniaturization.
• Consistent etch rates and reproducibility support its application in next-generation chip manufacturing.