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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

Guangliang Hu1, Yinchang Shen1, Lvkang Shen1

  • 1School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.

Materials (Basel, Switzerland)
|May 27, 2023
PubMed

Keywords:
GFETferroelectric filmflexible devicespolarization

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