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High-Sensitivity Nuclear Magnetic Resonance at Giga-Pascal Pressures: A New Tool for Probing Electronic and Chemical Properties of Condensed Matter under Extreme Conditions
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A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor.

Peng Li1,2, Wei Li2,3, Changnan Chen2,3

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.

Micromachines
|May 27, 2023
PubMed
Summary

This study introduces a novel piezoresistive high-temperature absolute pressure sensor using hybrid silicon-on-insulator wafers. The tiny, 0.5x0.5 mm sensor achieves high accuracy across a wide temperature range, enabling advanced industrial applications.

Keywords:
(100)/(111) hybrid SOI waferfront-side bulk-micromachining processhigh temperaturepiezoresistive pressure sensorultra-small size

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Area of Science:

  • Materials Science
  • Sensor Technology
  • Semiconductor Devices

Background:

  • Traditional high-temperature pressure sensors often face challenges with size, cost, and manufacturing complexity.
  • Silicon-on-insulator (SOI) technology offers potential for miniaturization and enhanced performance in sensor applications.

Purpose of the Study:

  • To develop a high-temperature absolute pressure sensor with a compact form factor and simplified fabrication process.
  • To leverage hybrid (100)/(111) SOI wafers for improved piezoresistor performance and integrated diaphragm/cavity construction.

Main Methods:

  • Utilized (100) silicon for high-performance piezoresistors and (111) silicon for single-sided fabrication of the diaphragm and reference cavity.
  • Employed front-sided shallow dry etching and self-stop lateral wet etching for precise diaphragm thickness control and cavity embedding.
  • Achieved miniaturization to 0.5x0.5 mm without double-sided etching, wafer bonding, or specialized cavity-SOI manufacturing.

Main Results:

  • The 1.5 MPa ranged sensor demonstrated a full-scale output of ~59.55 mV/1500 kPa/3.3 VDC at room temperature.
  • Achieved high overall accuracy of 0.17%FS across the -55 °C to 350 °C temperature range.
  • Reported low thermal hysteresis of approximately 0.15%FS at 350 °C.

Conclusions:

  • The developed piezoresistive sensor offers a cost-effective, high-yield solution for high-temperature pressure sensing.
  • The sensor's compact size and robust performance make it suitable for demanding industrial automation and wind tunnel testing applications.