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A 28 GHz Phased-Array Transceiver for 5G Applications in 22 nm FD-SOI CMOS
Dan Cracan1, Nourhan Elsayed2, Mihai Sanduleanu3
1Nordic Semiconductor ASA, Swindon SN5 6NX, UK.
Micromachines
|May 27, 2023
Summary
This study details a 28 GHz phased array transceiver for 5G, utilizing advanced CMOS technology. The design achieves efficient performance with a compact, low-power zero-IF architecture, marking a step forward for high-frequency wireless communication.
Area of Science:
- Electrical Engineering
- Wireless Communication
- Semiconductor Technology
Background:
- 5G technology demands high-frequency, efficient transceivers.
- Miniaturization and low power consumption are critical for mobile applications.
- Phased array antennas are key for beamforming in 5G.
Purpose of the Study:
- To design and implement a 28 GHz phased array transceiver for 5G.
- To leverage 22 nm FD-SOI CMOS technology for high-frequency applications.
- To achieve a compact and low-power solution.
Main Methods:
- Utilized a four-channel phased array receiver and transmitter architecture.
- Implemented phase shifting with coarse and fine control mechanisms.
- Employed a zero-IF architecture for reduced footprint and power.
Main Results:
- Achieved a receiver noise figure (NF) of 3.5 dB.
- Obtained a 1 dB compression point (P1dB) of -21 dBm.
- Demonstrated a receiver gain of 13 dB.
Conclusions:
- The designed transceiver is suitable for 5G applications requiring high frequency and efficiency.
- The zero-IF architecture enables small footprints and low power consumption.
- The 22 nm FD-SOI CMOS technology is viable for advanced 5G transceiver development.
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