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Area of Science:

  • Quantum Optics and Photonics
  • Materials Science and Engineering
  • Solid-State Physics

Background:

  • Single-photon emitters (SPEs) in wide bandgap semiconductors are key for quantum technologies.
  • Photon indistinguishability, vital for quantum applications, is limited by zero-phonon line (ZPL) broadening due to dephasing.
  • Existing models, often involving acoustic phonons, fail to explain observed dephasing in some SPEs.

Purpose of the Study:

  • To investigate the temperature-dependent dephasing mechanisms of SPEs in Gallium Nitride (GaN).
  • To understand the broadening of the zero-phonon line (ZPL) in GaN SPEs across a wide temperature range.
  • To develop a model explaining the observed ZPL linewidth and lineshape temperature dependence.

Main Methods:

  • Studied temperature dependence of ZPL spectra for GaN SPEs integrated with solid immersion lenses.
  • Analyzed ZPL lineshape and linewidth evolution from 10 K to 270 K.
  • Developed and applied a model based on optical phonon absorption/emission in elastic Raman processes.

Main Results:

  • Below 50 K, ZPL linewidth is temperature-independent (Gaussian shape), dominated by spectral diffusion.
  • Above 50 K, ZPL linewidth increases monotonically with temperature, with lineshape evolving to Lorentzian.
  • The observed temperature dependence deviates from typical power-law behavior and is well-explained by the proposed optical phonon model, yielding a phonon energy of ~19 meV.

Conclusions:

  • Dephasing in GaN SPEs above 50 K is governed by optical phonon interactions via elastic Raman scattering, not acoustic phonons.
  • The developed model accurately describes ZPL linewidth and lineshape temperature dependence in GaN SPEs from 10 K to 270 K.
  • This mechanism is likely relevant for other wurtzite III-V nitrides like hBN and AlN, impacting SPEs in these materials.