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Updated: Jul 28, 2025

Development of Efficient OLEDs from Solution Deposition
Published on: November 4, 2022
Efficient Spin-Flip between Charge-Transfer States for High-Performance Electroluminescence, without an Intermediate
Donghai Zhang1,2,3,4, Shanshan Jiang1,3, Xiaodong Tao1,2,3,4
1State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.
High-performance organic light-emitting diodes (OLEDs) require thermally activated delayed fluorescence (TADF) materials with excellent photoluminescence quantum yield (PLQY) and rapid reverse intersystem crossing (RISC). This study demonstrates a novel spin-flip mechanism for efficient RISC in TADF emitters, leading to superior OLED performance.
Area of Science:
- Materials Science
- Organic Electronics
- Photophysics
Background:
- Thermally activated delayed fluorescence (TADF) materials are crucial for efficient and stable organic light-emitting diodes (OLEDs).
- Achieving high photoluminescence quantum yield (PLQY) and fast reverse intersystem crossing (RISC) simultaneously in TADF materials is a key challenge.
- Molecular design is essential for controlling excited-state dynamics, but optimizing PLQY and RISC rates remains difficult.
Purpose of the Study:
- To systematically investigate the feasibility of a direct spin-flip transition between charge-transfer excited states (3CT-1CT) for efficient RISC.
- To explore how molecular structure influences RISC rates and exciton lifetimes in TADF emitters.
- To correlate TADF material properties with the performance of fabricated OLED devices.
Main Methods:
- Synthesis of three TADF emitters with similar structures but varying RISC rates and exciton lifetimes.
- Experimental characterization of photophysical properties, including PLQY, RISC rates, and energy levels.
- Theoretical calculations to analyze the energy gaps and reorganization energies of excited states.
- Fabrication and testing of OLED devices using the synthesized TADF emitters.
Main Results:
- Three TADF emitters were synthesized, exhibiting high PLQYs (89.5%–96.3%) and distinct RISC rates (0.03 × 106 s-1 vs. 2.26 × 106 s-1).
- Experimental and theoretical data suggest that a small singlet-triplet energy gap and low RISC reorganization energy facilitate efficient RISC via a direct 3CT-1CT spin-flip.
- The optimal TADF emitter enabled an OLED with a 27.1% external quantum efficiency, minimal roll-off (4.1% at 1,000 cd/m2), and high luminance (28,150 cd/m2).
Conclusions:
- A direct spin-flip 3CT-1CT transition, without intermediate states, can efficiently achieve fast RISC in TADF materials.
- Molecular design focusing on small energy gaps and low reorganization energies between CT states is a viable strategy for high-performance TADF emitters.
- The developed TADF emitter offers a promising pathway for realizing highly efficient and stable OLEDs.
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