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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

485
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
485
P-N junction01:11

P-N junction

590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

829
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
829
Biasing of P-N Junction01:16

Biasing of P-N Junction

629
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
629
Biasing of FET01:22

Biasing of FET

330
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
330
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

443
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
443

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Related Experiment Video

Updated: Jul 28, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Polarity-Tunable Field Effect Phototransistors.

Jintao Fu1,2, Hao Jiang1, Changbin Nie1,2

  • 1Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China.

Nano Letters
|May 30, 2023
PubMed
Summary

This study demonstrates a novel polarity-tunable field-effect phototransistor using a graphene/ultrathin Al2O3/Si structure. This device overcomes previous limitations, enabling both high gain and fast response for improved photodetection.

Keywords:
Field effect phototransistorsGain−bandwidth productGraphenePolaritySpecific detectivity

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Area of Science:

  • Optoelectronics
  • Semiconductor Devices

Background:

  • Field-effect phototransistors offer gate voltage modulation for performance control and signal amplification.
  • Conventional phototransistors have fixed unipolar or ambipolar responses post-fabrication.

Purpose of the Study:

  • To demonstrate a polarity-tunable field-effect phototransistor.
  • To overcome the gain-bandwidth trade-off in current phototransistor designs.

Main Methods:

  • Fabrication of a graphene/ultrathin Al2O3/Si structure.
  • Utilizing light to modulate the gating effect and alter transfer characteristics.

Main Results:

  • Achieved polarity tuning from unipolar to ambipolar response via light modulation.
  • Demonstrated high responsivity (>10^5 A/W), 3 dB bandwidth (100 kHz), and specific detectivity (1.91 × 10^13 Jones).
  • Obtained a gain-bandwidth product of 9.14 × 10^10 s^-1.

Conclusions:

  • The demonstrated device architecture overcomes the gain-bandwidth trade-off.
  • Enables simultaneous high-gain and fast-response photodetection.