High uniformity red µ-LED array with a current efficiency of 2.6 cd/A and ns-level response time

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Devices

Background:

• AlGaInP-based micro-light-emitting-diodes (µ-LEDs) are crucial for display and lighting applications.
• Surface passivation is essential for improving µ-LED performance and reliability.
• Ammonium sulfide ((NH4)2Sx) solutions are explored for surface treatment in optoelectronic devices.

Purpose of the Study:

• To investigate the impact of (NH4)2Sx surface treatment on AlGaInP-based 620-nm red µ-LED arrays.
• To evaluate the enhancement in optical and electrical characteristics post-treatment.
• To analyze the passivation effect on µ-LED performance using ns-level response time measurements.

Main Methods:

• Fabrication of AlGaInP-based 620-nm red µ-LED arrays.
• Application of (NH4)2Sx solutions for surface treatment on a subset of µ-LED arrays.
• Comparative characterization of treated and untreated µ-LED arrays.
• Measurement of current efficiency and light output uniformity.
• Analysis of device response time at the ns-level.

Main Results:

• The (NH4)2Sx surface treatment significantly improved the characteristics of the µ-LED arrays.
• A current efficiency of 2.6 cd/A was measured for the treated µ-LED array.
• Enhanced light output uniformity was observed in the treated µ-LED arrays.
• Fast ns-level response time measurements provided insights into the passivation effects.

Conclusions:

• The (NH4)2Sx surface treatment is an effective method for enhancing the performance of AlGaInP-based red µ-LEDs.
• Improved current efficiency and light output uniformity are key benefits of this surface treatment.
• Further analysis of passivation effects using advanced measurement techniques is warranted for optimizing µ-LED technology.