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Updated: Jul 28, 2025
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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
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Modulation of bulk and surface electronic structures for oxygen evolution by Cr, P co-doped Co3S4
Yiting Chen1, Xiaoyun Zhang1, Xiaoshuang Ma1
1Research Center for Photoelectrochemistry and Devices, School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China. yqwang@seu.edu.cn.
Chemical Communications (Cambridge, England)
|June 2, 2023
Abstract:
Co3S4 was doped by Cr in the bulk phase and P on the surface to achieve a low overpotential of 257 mV and a long-term durability over 48 h during the oxygen evolution reaction. This was caused by high-valence metal Cr and non-metal P atom doping enhanced conductivity and optimized adsorption energy of intermediates.
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