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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 28, 2025

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Organizing Uniform Phase Distribution in Methylammonium-Free 1.77 eV Wide-Bandgap Inverted Perovskite Solar Cells.

Zhanfei Zhang¹, Jianli Wang¹, Jianghu Liang¹

¹School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 20024, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)

|June 3, 2023

Summary

This summary is machine-generated.

A novel zwitterionic additive strategy improves wide bandgap perovskite solar cells (PSCs) by regulating crystal growth and enhancing stability. This method achieves a record 19.66% efficiency and excellent operational and humidity resistance.

Keywords:

halide distribution homogeneous crystallization process inverted wide-bandgap perovskite solar cells photo-induced halide segregation zwitterionic molecules

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Published on: September 8, 2017

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Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Disordered crystallization and poor phase stability in mixed halide perovskite films hinder inverted wide bandgap (WBG) perovskite solar cell (PSC) performance.
The differing crystallization rates of iodide- and bromide-based perovskite components complicate fabrication using traditional anti-solvent methods.

Purpose of the Study:

To develop a zwitterionic additive strategy for precise control over the crystal growth of Cs0.2 FA0.8 Pb(I0.6 Br0.4 )3 perovskite films.
To enhance the performance and stability of wide bandgap (WBG) perovskite solar cells (PSCs).

Main Methods:

Introduction of aminoethanesulfonic acid (AESA), a zwitterionic additive, to coordinate with perovskite precursors via hydrogen and Pb-O bonds.
Utilizing AESA to guide fast nucleation and retard crystallization, promoting homogeneous growth of mixed halide components.
AESA-driven defect passivation and inhibition of photo-induced halide segregation.

Main Results:

Achieved a record power conversion efficiency of 19.66% for an MA-free WBG p-i-n PSC (1.77 eV), with a Voc of 1.25 V and FF of 83.7%.
Demonstrated impressive humidity stability, retaining performance after 1000 hours at 30 ± 5% RH.
Showcased significantly improved continuous operation stability, lasting 300 hours at the maximum power point (MPP).

Conclusions:

The zwitterionic additive strategy effectively regulates perovskite crystallization, leading to high-performance WBG PSCs.
AESA integration enhances phase stability, passivates defects, and prevents halide segregation, crucial for device longevity.
This approach offers a promising pathway for developing stable and efficient perovskite solar cells.