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Updated: Jul 27, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing
Xi Zhou1,2,3, Liang Zhao4,5, Chu Yan2
1The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, 201210, Pudong, Shanghai, China.
Researchers developed a novel copper-silver alloy selector for one-selector-one-memristor cross-point arrays. This advancement improves data storage and neuromorphic computing by suppressing sneak-path currents and enabling neuron applications.
Area of Science:
- Materials Science and Engineering
- Electrical Engineering
- Computer Science
Background:
- Cross-point memory arrays offer a solution to the von Neumann bottleneck for high-density data storage and neuromorphic computing.
- Sneak-path currents in these arrays limit scalability and read accuracy, necessitating the development of selector devices.
- The one-selector-one-memristor (1S1R) architecture integrates a selector with each memristor to mitigate sneak-path issues.
Purpose of the Study:
- To demonstrate a thermally stable, electroforming-free selector device based on a CuAg alloy.
- To integrate this selector into a 1S1R cross-point array for improved memory and computing applications.
- To explore the potential of the CuAg alloy selector in neuromorphic computing beyond synaptic applications, specifically in neuron design.
Main Methods:
- Fabrication and characterization of a CuAg alloy-based selector device.
- Integration of the selector with SiO2-based memristors to form a vertically stacked 64x64 1S1R cross-point array.
- Experimental implementation of a selector-based leaky integrate-and-fire neuron circuit.
Main Results:
- The CuAg alloy selector exhibited thermal stability, electroforming-free operation, tunable threshold voltage, and an ON/OFF ratio exceeding 7 orders of magnitude.
- The integrated 1S1R devices demonstrated extremely low leakage currents and suitable switching characteristics for storage-class memory and synaptic weight storage.
- A functional selector-based leaky integrate-and-fire neuron was successfully implemented, showcasing expanded application potential.
Conclusions:
- The CuAg alloy selector is a promising component for overcoming sneak-path current limitations in 1S1R cross-point memory arrays.
- The developed 1S1R array is suitable for next-generation data storage and neuromorphic computing applications.
- CuAg alloy selectors can be effectively utilized in both synaptic and neuronal components of neuromorphic systems.
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