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Updated: Jul 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with
Ruiyue Chu1, Bin Cui1, Liang Liu1
1School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, China.
Abstract:
Reversal of magnetization via current-induced spin-orbit torque (SOT) is one of the core issues in spintronics. However, an in-plane assistant field is usually required for the deterministic switching of a perpendicularly magnetized system. Additionally, the efficiency of SOT is low, which is detrimental to device applications. This study achieved a reversible and non-volatile control of the critical current for magnetization switching and spin Hall efficiency in the TaN/W/Pt/Co/Pt/TaN heterostructures by ionic liquid (IL) gating-induced hydrogen ion adsorption and desorption in the upper Pt layer. Furthermore, the thinning of the Pt and TaN capping layers activated the oxygen ion migration toward the Co layer under IL gating, resulting in an exchange bias field and allowing field-free magnetization switching and Boolean logic operation. The results of this study offer an intriguing opportunity to promote the development of SOT-based spintronic devices from the perspective of iontronics with low energy dissipation.
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