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Updated: Jul 27, 2025

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
Published on: May 23, 2017
Nazar Delegan1,2, Samuel J Whiteley3, Tao Zhou4
1Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, United States of America.
Researchers developed new nanoscale tools to precisely create and study quantum spin defects in silicon carbide. This allows for better control over qubit properties by minimizing local strain effects.
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07:24Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
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