Controllable spin splitting in 2D ferroelectric few-layer

Area of Science:

• Materials Science
• Condensed Matter Physics
• Solid State Chemistry

Background:

• γ-GeSe is a novel layered bulk material recently synthesized.
• Two-dimensional (2D) materials offer unique electronic and physical properties.
• Understanding few-layer γ-GeSe is crucial for exploring its potential applications.

Purpose of the Study:

• To systematically investigate the physical properties of few-layer γ-GeSe using first-principles calculations.
• To explore the electronic, ferroelectric, and optical characteristics of 2D γ-GeSe.
• To assess the potential of few-layer γ-GeSe in advanced technological applications.

Main Methods:

• Density functional theory (DFT) based first-principles calculations.
• Systematic study of electronic band structure and layer-dependent properties.
• Analysis of ferroelectric switching barriers and spin-orbit coupling effects.

Main Results:

• Few-layer γ-GeSe are semiconductors with layer-number-dependent band gaps.
• γ-GeSe with n ≥ 2 layers exhibit ferroelectricity with low transition barriers.
• Spin-orbit coupling induces switchable spin splitting, tunable by ferroelectric reversal and strain due to negative piezoelectricity.
• Excellent optical absorption properties were observed.

Conclusions:

• Few-layer γ-GeSe possesses promising semiconducting, ferroelectric, and spin-dependent electronic properties.
• The material's properties can be tuned by controlling the layer number and applying external stimuli like strain.
• 2D γ-GeSe is a strong candidate for next-generation spintronic and optoelectronic devices.