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MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Development of a 3D Graphene Electrode Dielectrophoretic Device

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Published on: June 22, 2014

N-Doped Graphene-like Film/Silicon Structures as Micro-Capacitor Electrodes.

Daria M Sedlovets¹

¹Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Science (IMT RAS), Moscow District, 6 Academician Ossipyan Str., 142432 Chernogolovka, Russia.

Materials (Basel, Switzerland)

|June 10, 2023

Summary

Nitrogen-doped graphene-like films (N-GLFs) synthesized directly on silicon offer a breakthrough for on-chip micro-capacitors. This method achieves high capacitance and stability, ideal for miniaturized electronics.

Keywords:

electrochemical capacitance graphene-like film impedance spectroscopy nitrogen doping on-chip devices voltammetry

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Published on: July 24, 2015

Area of Science:

Materials Science
Electrochemistry
Nanotechnology

Background:

Miniaturization of portable electronics is limited by energy storage solutions.
Graphene materials show promise for supercapacitors, and silicon is key for on-chip integration.

Purpose of the Study:

To develop a direct, transfer-free method for synthesizing N-doped graphene-like films (N-GLFs) on silicon for on-chip micro-capacitors.
To optimize N-GLF synthesis for enhanced electrochemical performance and stability.

Main Methods:

Liquid-based Chemical Vapor Deposition (CVD) of N-GLFs on Si at temperatures from 800-1000 °C.
Electrochemical characterization using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.
Evaluation of capacitance and stability as a function of synthesis temperature and film thickness.

Main Results:

N-doping significantly improves the capacitance of graphene-like films.
Optimal synthesis temperature for N-GLFs on Si is 900 °C.
An optimal film thickness of approximately 50 nm was identified, yielding a record area-normalized capacitance of 960 mF/cm².
The films exhibit high cyclic stability.

Conclusions:

Direct liquid-based CVD of N-GLFs on Si is a viable and efficient method for creating high-performance on-chip micro-capacitors.
This approach overcomes miniaturization challenges by enabling direct integration of energy storage components.
The achieved capacitance surpasses existing records for thin graphene-based films, paving the way for advanced portable electronics.