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Updated: Jul 27, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
Daniele Barettin1, Igor V Shtrom2, Rodion R Reznik2,3,4
1Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy.
Abstract:
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
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