Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

669
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
669
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

395
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395
Atomic Nuclei: Nuclear Spin State Overview01:03

Atomic Nuclei: Nuclear Spin State Overview

1.0K
NMR-active nuclei have energy levels called 'spin states' that are associated with the orientations of their nuclear magnetic moments. In the absence of a magnetic field, the nuclear magnetic moments are randomly oriented, and the spin states are degenerate. When an external magnetic field is applied, the spin states have only 2 + 1 orientations available to them. A proton with = ½ has two available orientations. Similarly, for a quadrupolar nucleus with a nuclear spin value of...
1.0K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Field Effect Transistor01:29

Field Effect Transistor

485
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
485
Atomic Nuclei: Nuclear Spin01:08

Atomic Nuclei: Nuclear Spin

2.1K
All atomic particles possess an intrinsic angular momentum, or 'spin'. Electrons, protons, and neutrons each have a spin value of ½, although protons and neutrons in nuclei may have higher half-integer spins owing to energetic factors.
Atomic nuclei have a net nuclear spin, , which can have an integer or half-integer value. In atomic nuclei, the spins of protons are paired against each other but not with neutrons, and vice versa. Consequently, an even number of protons does not...
2.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High-Efficiency Asymmetric Spin Transport Enabled by Nanocolumn Molecular Semiconductors.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Deuterated perovskite for room temperature spin device.

Nature communications·2026
Same author

Dimensionality-Mixed Phases Facilitate Chirality Transfer and Spin-Orbit Coupling for Chiral Perovskite Red Spin-LEDs.

ACS nano·2026
Same author

Designing Nonplanar Electron Acceptors for High-Performance Organic Photodetectors: Mechanism Analysis and Application in Gesture Recognition.

ACS nano·2025
Same author

Enhancing Room-Temperature Spin Lifetimes in Molecular Semiconductors by Designing Intramolecular Dipole Orientations.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Room-Temperature Organic Spintronic Devices with Wide Range Magnetocurrent Tuning and Multifunctionality via Electro-Optical Compensation Strategy.

Advanced materials (Deerfield Beach, Fla.)·2025

Related Experiment Video

Updated: Jul 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Emerging Spintronic Materials and Functionalities.

Lidan Guo1, Shunhua Hu1,2, Xianrong Gu1

  • 1Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|June 13, 2023
PubMed
Summary

Spintronics utilizes electron spins for computing, offering faster, smaller devices. This review covers organic semiconductors, perovskites, and 2D materials for advanced spintronic applications.

Keywords:
2D materialschiral‐induced spin selectivitymultifunctional spintronic devicesorganic semiconductorsorganic–inorganic hybrid perovskites

More Related Videos

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.6K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

5.8K

Related Experiment Videos

Last Updated: Jul 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K
Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.6K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

5.8K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electronics Engineering

Background:

  • The information era demands faster and more efficient computations.
  • Spintronics offers an alternative to charge-based computing by using electron spins.
  • Novel materials are crucial for developing advanced spintronic devices.

Purpose of the Study:

  • To systematically review promising materials for advanced spintronic applications.
  • To discuss the spintronic properties of organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs).
  • To overview multifunctionalities including photoelectric and chiral-induced spin selectivity (CISS) effects.

Main Methods:

  • Systematic literature review of spintronic materials.
  • Separate discussion of spin transport and spin manipulation in OSCs, OIHPs, and 2DMs.
  • Overview of multifunctionalities like spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions.

Main Results:

  • OSCs, OIHPs, and 2DMs exhibit unique properties suitable for spintronics.
  • Distinct chemical and physical structures influence spin transport and manipulation in these materials.
  • Multifunctionalities like CISS enable diverse spintronic device applications.

Conclusions:

  • These multifunctional materials are key to realizing next-generation computing technologies.
  • Further research into these materials will drive advancements in spintronic devices.
  • Challenges and future perspectives for material development in spintronics are presented.