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Criticality and Neuromorphic Sensing in a Single Memristor.

Zelin Ma1,2, Wanjun Chen1,2, Xucheng Cao1,2

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Atomic switching events in resistive random access memory (RRAM) exhibit critical dynamics, enabling memristor-based sensory systems that surpass theoretical limits.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Neuroscience

Background:

  • Resistive random access memory (RRAM) is crucial for data storage and neuromorphic computing.
  • The behavior of nanoscale conductive filaments is central to RRAM functionality.
  • Understanding memristor switching dynamics is key to advancing these technologies.

Purpose of the Study:

  • To analyze current noise in silicon-based memristors during filament growth.
  • To investigate the criticality and universality of atomic switching events.
  • To explore the application of memristor criticality in bio-inspired sensory systems.

Main Methods:

  • Analysis of current noise in silicon-based memristors.
  • Characterization of percolation path formation during filament growth.
  • Simulation of hair cell functionality using memristor criticality.
  • Development of a single-memristor sensing primitive.

Main Results:

  • Atomic switching events in memristors demonstrate scale-free avalanche dynamics indicative of criticality.
  • Switching dynamics exhibit universality, independent of device size or material properties.
  • Memristor criticality was successfully utilized to simulate auditory hair cell frequency selectivity.
  • A novel memristor-based sensor achieved stimulus representation beyond Nyquist-Shannon limits.

Conclusions:

  • Memristor switching dynamics governed by criticality offer new avenues for neuromorphic engineering.
  • The demonstrated bio-inspired sensory applications highlight the potential of memristors in advanced computing.
  • This research bridges fundamental physics of memristors with practical applications in sensing and computation.