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Updated: Jul 26, 2025

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
Nuclear Quantum Effects Prolong Charge Carrier Lifetimes in Hybrid Organic-Inorganic Perovskites
Yulong Liu1, Run Long1, Wei-Hai Fang1
1College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China.
Abstract:
Hybrid organic-inorganic perovskites (HOIPs) contain light hydrogen atoms that exhibit significant nuclear quantum effects (NQEs). We demonstrate that NQEs have a strong effect on HOIP geometry and electron-vibrational dynamics at both low and ambient temperatures, even though charges in HOIPs reside on heavy elements. By combining ring-polymer molecular dynamics (MD) and ab initio MD with nonadiabatic MD and time-dependent density functional theory and focusing on the most studied tetragonal CH3NH3PbI3, we show that NQEs increase the disorder and thermal fluctuations through coupling of the light inorganic cations to the heavy inorganic lattice. The additional disorder induces charge localization and decreases electron-hole interactions. As a result, the nonradiative carrier lifetimes are extended by a factor of 3 at 160 K and 1/3 at 330 K. The radiative lifetimes are increased by 40% at both temperatures. The fundamental band gap decreases by 0.10 and 0.03 eV at 160 and 330 K, respectively. By enhancing atomic motions and introducing new vibrational modes, NQEs strengthen electron-vibrational interactions. Decoherence, determined by elastic scattering, accelerates almost by a factor of 2 due to NQEs. However, the nonadiabatic coupling, driving nonradiative electron-hole recombination, decreases because it is more sensitive to structural distortions than atomic motions in HOIPs. This study demonstrates, for the first time, that NQEs should be considered to achieve an accurate understanding of geometry evolution and charge carrier dynamics in HOIPs and provides important fundamental insights for the design of HOIPs and related materials for optoelectronic applications.
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