Flexible, Transparent, and Wafer-Scale Artificial Synapse Array Based on TiO_x /Ti₃ C₂ T_x Film for Neuromorphic...

Area of Science:

• Materials Science
• Nanotechnology
• Computer Engineering

Background:

• Traditional 2D-material memristors lack flexibility and transparency, limiting their use in flexible electronics.
• Neuromorphic computing requires advanced components for efficient in-memory processing.

Purpose of the Study:

• To fabricate a flexible and transparent artificial synapse array for neuromorphic computing.
• To overcome the limitations of existing 2D-material memristors.

Main Methods:

• Solution-processing of TiO_x /Ti₃ C₂ T_x films.
• Fabrication of a flexible artificial synapse array.
• Characterization of memristor performance, flexibility, and endurance.

Main Results:

• Achieved high transmittance (≈90%) and oxidation resistance (>30 days).
• Demonstrated low device variability, long retention, high ON/OFF ratio, and synaptic behavior.
• Exhibited excellent flexibility (R = 1.0 mm) and mechanical endurance (10⁴ cycles).

Conclusions:

• The TiO_x /Ti₃ C₂ T_x artificial synapse array shows promise for next-generation flexible neuromorphic computing.
• The developed memristors offer superior performance and flexibility compared to existing technologies.