Preparation of Structure Vacancy Defect Modified Diatomic-Layered g-C₃ N₄ Nanosheet with Enhanced Photocatalytic...

Structure self-modification of graphitic carbon nitride (g-C₃ N₄ ) without the assistance of other species has attracted considerable attention. In this study, the structure vacancy defect modified diatomic-layered g-C₃ N₄ nanosheet (VCN) is synthesized by thermal treatment of bulk g-C₃ N₄ in a quartz tube with vacuum atmosphere that will generate a pressure-thermal dual driving force to boost the exfoliation and formation of structure vacancy for g-C₃ N₄ . The as-prepared VCN possesses a large specific surface area with a rich pore structure to provide more active centers for catalytic reactions. Furthermore, the as-formed special defect level in VCN sample can generate a higher exciton density at photoexcitation stage. Meanwhile, the photogenerated charges will rapidly transfer to VCN surface due to the greatly shortened transfer path resulting from the ultrathin structure (≈1.5 nm), which corresponds to two graphite carbon nitride atomic layers. In addition, the defect level alleviates the drawback of enlarged bandgap caused by the quantum size effect of nano-scaled g-C₃ N₄ , resulting in a well visible-light utilization. As a result, the VCN sample exhibits an excellent photocatalytic performance both in hydrogen production and photodegradation of typical antibiotics.