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Ultralow Tip-Force Driven Sizable-Area Domain Manipulation through Transverse Flexoelectricity.

Yingzhuo Lun¹, Xueyun Wang¹, Jiaqian Kang¹

¹School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China.

Advanced Materials (Deerfield Beach, Fla.)

|June 26, 2023

Summary

Engineered transverse flexoelectricity enables large-area mechanical control of ferroelectric domains in suspended films. This method achieves domain switching with low force, preserving the surface and expanding film thickness possibilities.

Keywords:

flexoelectricity mechanical domain switching strain gradient suspended van der Waals ferroelectrics

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Deterministic control of ferroelectric domains is crucial for advanced electronic devices.
Mechanical manipulation of ferroelectric polarization via flexoelectricity is typically localized and can cause surface damage.

Purpose of the Study:

To demonstrate enhanced mechanical domain switching in ferroelectrics using engineered transverse flexoelectricity.
To overcome the limitations of localized switching and surface damage in conventional methods.

Main Methods:

Utilizing suspended van der Waals ferroelectrics.
Engineering transverse flexoelectricity to enhance domain switching.
Employing experimental techniques and phase-field simulations for analysis.

Main Results:

Achieved sizable-area domain switching under ultralow tip-force in suspended ferroelectrics.
Preserved surface integrity during the mechanical manipulation process.
Significantly improved the film thickness range for domain switching (hundreds of nanometers) compared to substrate-supported films.

Conclusions:

Engineered transverse flexoelectricity is a powerful tool for improving mechanical domain switching.
This approach offers opportunities for flexoelectricity-based domain control in low-dimensional ferroelectrics and related devices.