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DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride
Feifei Zhou1, Zhengzhi Jiang2, Haidong Liang3
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Nano Letters
|June 26, 2023
Summary
Researchers optimized spin defects in hexagonal boron nitride (h-BN) for quantum sensing. They improved the sensitivity of negatively charged boron vacancy (VB-) centers using optically detected magnetic resonance (ODMR).
Area of Science:
- Quantum sensing and metrology
- Materials science of 2D materials
- Solid-state spin physics
Background:
- Van der Waals materials offer unique advantages for in situ quantum sensing.
- Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN) are promising spin defects.
- Optically detected magnetic resonance (ODMR) is a key technique for probing spin defects.
Purpose of the Study:
- To systematically investigate laser and microwave power broadening effects in VB- ODMR.
- To optimize ODMR parameters for enhanced sensitivity of VB- centers.
- To provide insights for quantum sensing and information processing applications.
Main Methods:
- Continuous-wave optically detected magnetic resonance (ODMR) spectroscopy.
- Systematic variation of laser and microwave power.
- Analysis of ODMR contrast and linewidth.
- Application of a two-level simplified model for ODMR dynamics.
Main Results:
- Characterization of ODMR contrast and linewidth as a function of laser and microwave power.
- Experimental data successfully explained by a two-level ODMR dynamics model.
- Significant improvement in DC magnetic field sensitivity of VB- ensemble up to 2.87 ± 0.07 μT/math.
Conclusions:
- Optimized power conditions enhance the performance of VB- centers in h-BN.
- The study provides crucial data for understanding ODMR power broadening.
- Results pave the way for advanced quantum sensing and quantum information applications using VB- centers.
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