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DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride

Feifei Zhou1, Zhengzhi Jiang2, Haidong Liang3

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.

Nano Letters
|June 26, 2023
PubMed

Keywords:
hexagonal boron nitride (h-BN)negatively charged boron vacancy (VB−) centersoptically detected magnetic resonance (ODMR)power broadeningquantum sensing

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