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Updated: Jul 25, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Exploring room temperature spin transport under band gap opening in bilayer graphene
Christopher R Anderson1, Noel Natera-Cordero2,3, Victor H Guarochico-Moreira2,4,5
1Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK. chris.anderson@manchester.ac.uk.
Abstract:
We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.
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