Atomic-scale identification of nitrogen dopants in graphene on Ir(111) and Ru(0001)
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Updated: Jul 25, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Huan Yang1,2, Ivan Abilio3,4, Juan Bernal Romero1
1Department of Physics and Astronomy, California State University, Northridge, CA 91330, United States of America.
Abstract:
Nitrogen (N) doped graphene materials have been synthesized using the sole precursor adenine on the Ir(111) and Ru(0001) surfaces. X-ray photoelectron spectroscopy and scanning tunneling microscopy (STM) have been used to characterize the obtained N-doped graphene materials. Several graphitic and pyridinic N dopants have been identified on the atomic scale by combining STM measurements and STM simulations based on density functional theory calculations.
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