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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Alexei V Sakharov1,2, Dmitri S Arteev2, Evgenii E Zavarin1,2

  • 1Submicron Heterostructures for Microelectronics, Research and Engineering Center, RAS, 26 Politekhnicheskaya, 194021 Saint-Petersburg, Russia.

Materials (Basel, Switzerland)
|June 28, 2023
PubMed

Keywords:
AlGaNHEMTMOVPESicarrier mobilitymiscut

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