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Disorder effect on intersubband optical absorption ofn-typeδ-doped quantum well in GaAs
H Noverola-Gamas1, L G Macias Rojas2, S Azalim3
1División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda, Cunduacán 86680, Mexico.
None:
The inevitable structural disorder associated with the fluctuation of the applied external electric field, laser intensity, and bidimensional density in the low dimensional quantum system can affect noticeably optical absorption properties and the related phenomena. In this work, we study the effect of structural disorder on the optical absorption properties in delta-doped quantum wells (DDQWs). Starting from effective mass approximation and the Thomas-Fermi approach as well as using the matrix density, the electronic structure and the optical absorption coefficients of DDQWs are determined. It is found that the optical absorption properties depend on the strength and the type of structural disorder. Particularly, the bidimensional density disorder suppresses strongly the optical properties. Whilst, the disordered external applied electric field fluctuates moderately in the properties. In contrast, the disordered laser holds absorption properties unalterable. So, our results specify that to have and preserve good optical absorption properties in DDQWs, requires precise control of the bidimensional. Besides, the finding may improve the understanding of the impact of the disorder on the optoelectronic properties based on DDQWs.
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