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Linewidth narrowing in self-injection-locked on-chip lasers.

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  • 1Integrated Photonics Lab, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia.

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Summary
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This study investigates Hz-level linewidth narrowing in on-chip lasers using a composite-cavity structure. Quantum-well lasers offer higher optical power, while quantum-dot lasers provide better energy efficiency for applications like LIDAR.

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Area of Science:

  • Photonics and Laser Technology
  • Semiconductor Device Physics
  • Quantum Optics

Background:

  • Stable laser emission with narrow linewidth is crucial for applications such as coherent communications, LIDAR, and remote sensing.
  • On-chip lasers with Hz-level lasing linewidth are highly desirable for advanced optical systems.
  • Understanding the physics of spectral narrowing in self-injection-locked lasers is essential for device optimization.

Purpose of the Study:

  • To investigate the physics behind spectral narrowing to Hz-level linewidth in self-injection-locked on-chip lasers.
  • To analyze heterogeneously integrated III-V/SiN lasers with quantum-dot and quantum-well active regions, focusing on carrier quantum confinement effects.
  • To explore the trade-offs between linewidth, output power, and injection current for different device configurations.

Main Methods:

  • Utilized a composite-cavity structure for self-injection-locked on-chip lasers.
  • Analyzed quantum-dot and quantum-well active regions, considering carrier quantum confinement and density of states.
  • Performed parametric studies and multi-objective optimization to tailor device performance.

Main Results:

  • Both quantum-well and quantum-dot devices demonstrated similar linewidth-narrowing capabilities.
  • Quantum-well lasers exhibited higher optical power in the self-injection-locked state.
  • Quantum-dot lasers showed greater energy efficiency.
  • Minimizing quantum-well layers reduced threshold current without significant power loss.
  • Increasing quantum-dot layers or density enhanced output power with minimal threshold current increase.

Conclusions:

  • Heterogeneously integrated III-V/SiN lasers can achieve Hz-level linewidths.
  • Quantum-well and quantum-dot active regions offer distinct advantages in terms of power and efficiency.
  • Optimization strategies for quantum-well and quantum-dot lasers can guide engineering design for improved performance.