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Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer.

Hanru Zhao, Meixin Feng, Jianxun Liu

    Optics Express
    |June 29, 2023
    PubMed
    Summary

    Plasma-enhanced atomic layer deposition (PEALD) SiO2 films significantly improve GaN laser performance by reducing defects. This leads to lower threshold currents and enhanced efficiency compared to PECVD Si3N4 films.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Dry-etching of Gallium Nitride (GaN)-based materials introduces sidewall defects, acting as non-radiative recombination centers and charge traps.
    • These defects degrade the performance of GaN-based devices, particularly lasers.

    Purpose of the Study:

    • To investigate the impact of dielectric films deposited by plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) on GaN-based microdisk laser performance.
    • To compare the effectiveness of PEALD-SiO2 and PECVD-Si3N4 passivation layers in mitigating dry-etching-induced defects.

    Main Methods:

    • Deposition of dielectric films (SiO2 and Si3N4) using PEALD and PECVD techniques.
    • Fabrication and characterization of GaN-based microdisk lasers with different passivation layers.

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  • Analysis of device performance metrics including threshold current, luminescence efficiency, and size dependence.

    • Main Results:

    • The PEALD-SiO2 passivation layer significantly reduced trap-state density in GaN-based microdisk lasers.
    • Non-radiative recombination lifetime was notably increased by the PEALD-SiO2 layer.
    • Compared to PECVD-Si3N4, PEALD-SiO2 resulted in a decreased threshold current, enhanced luminescence efficiency, and reduced size dependence.

    Conclusions:

    • PEALD-SiO2 is a superior passivation material for GaN-based microdisk lasers compared to PECVD-Si3N4.
    • Effective passivation of sidewall defects is crucial for improving the performance and reliability of GaN-based optoelectronic devices.