High light extraction performance using evanescent waves for top emission OLED applications with thin film...

We report high light extraction from the top emission OLED (TEOLED) device structure by improving mainly the waveguide mode loss in the atomic layer deposition processed thin film encapsulation (TFE) layer. A novel structure incorporating the light extraction concept using evanescent waves and the hermetic encapsulation of a TEOLED device is presented here. When the TEOLED device is fabricated using the TFE layer, a substantial amount of generated light is trapped inside the device due to the difference in refractive index (RI) between the capping layer (CPL) and the aluminum oxide (Al₂O₃) layer. By inserting a low RI layer at the interface between the CPL and Al₂O₃, the direction of the internal reflected light is changed by the evanescent waves. The high light extraction with the low RI layer is attributed to the presence of evanescent waves and an electric field in the low RI layer. The novel fabricated TFE structure, CPL/ low RI layer/ Al₂O₃/ polymer/ Al₂O₃, is reported here. The current efficiency of the fabricated blue TEOLED device using this low RI layer is improved by about 23% and the blue index value is enhanced by about 26%. This new approach for light extraction will be applicable to future encapsulation technology for flexible optoelectronic devices.