Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles

Resistive random access memory has been widely studied as a powerful candidate for building future memories and realizing high-efficiency artificial neuromorphic systems. In this paper, gold nanoparticles (Au NPs) are doped in a leaf solution of Scindapsus aureus (SA) as the active layer to fabricate Al/SA:Au NPs/ITO/glass resistive random access memory. The device exhibits stable bipolar resistance switching characteristics. More importantly, the device's multilevel storage capabilities and synaptic potentiation and depression behaviour have been proven. Compared with the device without doped Au NPs in the active layer, the device has a higher ON/OFF current ratio, which is attributed to the Coulomb blockade effect caused by the Au NPs. The device plays an important role in realizing high-density memory and efficient artificial neuromorphic systems.