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Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact
Dongwon Choi1,2, Jeehoon Jeon1, Tae-Eon Park1
1Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
Discover Nano
|June 29, 2023
Summary
Researchers reduced Schottky barrier height in molybdenum disulfide (MoS2) field-effect transistors (FETs) by modifying gold contacts with polyethylenimine (PEI). This simple method enhances 2D material device performance for electronics and optoelectronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials, particularly transition-metal dichalcogenides (TMDCs) like MoS2, offer superior semiconducting properties for advanced electronics.
- Schottky barriers at metal-semiconductor interfaces impede the performance of TMDC-based devices, limiting their application potential.
- Existing methods to mitigate Schottky barriers often involve complex processes or specialized materials.
Purpose of the Study:
- To investigate a facile method for reducing the Schottky barrier height in MoS2 field-effect transistors (FETs).
- To explore the use of polyethylenimine (PEI) as a surface modifier to tune the work function of metal contacts.
- To demonstrate the efficacy of PEI in improving the performance of MoS2 FETs for electronic and optoelectronic applications.
Main Methods:
- Synthesized MoS2 field-effect transistors (FETs) with gold (Au) contacts.
- Applied a thin coating of polyethylenimine (PEI) to the Au contact surfaces to modify their work function.
- Characterized the electrical properties of the MoS2 FETs before and after PEI treatment to assess the Schottky barrier height reduction.
Main Results:
- Polyethylenimine (PEI) effectively lowered the work function of the gold (Au) contact electrodes.
- The PEI surface modification significantly reduced the Schottky barrier height at the MoS2/Au interface.
- Treated MoS2 FETs exhibited improved electrical performance compared to untreated devices.
Conclusions:
- Surface modification with PEI is a rapid, simple, and effective strategy for reducing Schottky barrier heights in MoS2 FETs.
- This approach offers a promising pathway for enhancing the performance of 2D material-based electronic and optoelectronic devices.
- The method's ease of implementation under ambient conditions makes it suitable for large-area electronics fabrication.
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