A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect...

Area of Science:

• Semiconductor Device Physics
• Nanotechnology
• Materials Science

Background:

• Conventional bidirectional field-effect transistors (BRFETs) often rely on doping and band-to-band tunneling for carrier generation.
• Achieving high performance in nanoscale devices requires efficient carrier injection mechanisms.
• Schottky barriers play a crucial role in controlling current flow at metal-semiconductor interfaces.

Purpose of the Study:

• To propose and investigate a novel nanoscale dopingless bidirectional RFET (BRFET).
• To introduce a complementary low Schottky barrier (CLSB) concept for enhanced device performance.
• To analyze the working principle and performance characteristics of the proposed CLSB-BRFET.

Main Methods:

• Device simulation was employed to investigate the performance of the CLSB-BRFET.
• The proposed device was compared against conventional BRFETs.
• Energy band theory was used to interpret the device's working principle.

Main Results:

• The proposed CLSB-BRFET employs two different metals to create distinct Schottky barriers.
• A complementary low Schottky barrier (CLSB) is formed, facilitating carrier injection via thermionic emission.
• The CLSB-BRFET demonstrates a larger forward current compared to conventional BRFETs.
• Device simulations confirm the enhanced output characteristics and reconfigurable function.

Conclusions:

• The CLSB-BRFET offers a promising alternative to conventional BRFETs by enabling efficient carrier injection.
• Dopingless operation and enhanced current drive are key advantages of the proposed device architecture.
• The CLSB concept provides a pathway for developing high-performance nanoscale transistors.