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A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect

Xiaoshi Jin1, Shouqiang Zhang2, Chunrong Zhao2

  • 1School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China. xsjin@live.cn.

Discover Nano
|June 29, 2023
PubMed

Keywords:
Field effect transistorForward currentReconfigurableSchottky barrier height

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