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Updated: Aug 19, 2026

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells
Published on: October 3, 2018
Performance optimization of In(Ga)As quantum dot intermediate band solar cells
Guiqiang Yang1,2, Wen Liu1,2, Yidi Bao1,2
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Abstract:
Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.
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