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Updated: Jul 25, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Edge contacts accelerate the response of MoS2 photodetectors
Fabian Strauß1,2, Christine Schedel1, Marcus Scheele1,2
1Institute of Physical and Theoretical Chemistry, University of Tübingen Auf der Morgenstelle 18 72076 Tübingen Germany marcus.scheele@uni-tuebingen.de.
Abstract:
We use a facile plasma etching process to define contacts with an embedded edge geometry for multilayer MoS2 photodetectors. Compared to the conventional top contact geometry, the detector response time is accelerated by more than an order of magnitude by this action. We attribute this improvement to the higher in-plane mobility and direct contacting of the individual MoS2 layers in the edge geometry. With this method, we demonstrate electrical 3 dB bandwidths of up to 18 MHz which is one of the highest values reported for pure MoS2 photodetectors. We anticipate that this approach should also be applicable to other layered materials, guiding a way to faster next-generation photodetectors.
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