Constructing abundant interfaces by decorating MoP quantum dots on CoP nanowires to induce electronic structure

Yuanyuan Chen1, Tingting Sui1, Chaojie Lyu1

  • 1Beijing Advanced Innovation Center for Materials Genome Engineering, Center for Green Innovation, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, P. R. China. cbwan@ustb.edu.cn.

Materials Horizons
|July 5, 2023
PubMed
Summary

Interface engineering of MoP/CoP/Cu3P/CF enhances catalytic activity for efficient hydrogen production. This hierarchical structure shows excellent water splitting performance due to optimized electronic structures at interfaces.

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