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Magnetization Control of Zero-Field Intrinsic Superconducting Diode Effect
Hideki Narita1, Jun Ishizuka2, Daisuke Kan1,3
1Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
This study reveals an intrinsic zero-field superconducting diode effect (SDE) in novel artificial superlattices. This discovery enables magnetization control of the SDE for advanced electronic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Electronics
Background:
- The superconducting diode effect (SDE) enables directional superconductivity, crucial for low-power electronics and memory.
- Current SDE control requires precise tuning of external parameters like magnetic fields.
- Understanding SDE mechanisms is vital for developing robust SDE devices.
Purpose of the Study:
- To demonstrate and understand an intrinsic zero-field superconducting diode effect (SDE).
- To explore the control of SDE properties using magnetization.
- To investigate material design principles for enhanced SDE.
Main Methods:
- Fabrication of Fe/Pt-inserted non-centrosymmetric Nb/V/Ta superconducting artificial superlattices.
- Experimental characterization of the zero-field SDE.
- First-principles calculations to analyze SDE mechanisms and enhancement factors.
Main Results:
- Demonstrated an intrinsic zero-field SDE with up to 40% efficiency.
- Showcased magnetization-tunable polarity and magnitude of the SDE.
- Identified induced magnetic toroidal moments and asymmetric proximity effects as key to SDE enhancement.
Conclusions:
- The study presents a novel material platform for intrinsic zero-field SDE.
- Magnetization control offers a robust method for SDE manipulation.
- Findings pave the way for superconducting quantum devices and topological superconductor materials.
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