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Updated: Jul 24, 2025

Flash Infrared Annealing for Perovskite Solar Cell Processing
Published on: February 3, 2021
Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells
Xin Yu Chin1,2, Deniz Turkay1, Julian A Steele3,4,5
1Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland.
Abstract:
Silicon solar cells are approaching their theoretical efficiency limit of 29%. This limitation can be exceeded with advanced device architectures, where two or more solar cells are stacked to improve the harvesting of solar energy. In this work, we devise a tandem device with a perovskite layer conformally coated on a silicon bottom cell featuring micrometric pyramids-the industry standard-to improve its photocurrent. Using an additive in the processing sequence, we regulate the perovskite crystallization process and alleviate recombination losses occurring at the perovskite top surface interfacing the electron-selective contact [buckminsterfullerene (C60)]. We demonstrate a device with an active area of 1.17 square centimeters, reaching a certified power conversion efficiency of 31.25%.

