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Updated: Jul 24, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Interface engineering for high-performance, triple-halide perovskite-silicon tandem solar cells
Silvia Mariotti1, Eike Köhnen1, Florian Scheler1
1Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany.
Abstract:
Improved stability and efficiency of two-terminal monolithic perovskite-silicon tandem solar cells will require reductions in recombination losses. By combining a triple-halide perovskite (1.68 electron volt bandgap) with a piperazinium iodide interfacial modification, we improved the band alignment, reduced nonradiative recombination losses, and enhanced charge extraction at the electron-selective contact. Solar cells showed open-circuit voltages of up to 1.28 volts in p-i-n single junctions and 2.00 volts in perovskite-silicon tandem solar cells. The tandem cells achieve certified power conversion efficiencies of up to 32.5%.
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