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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Updated: Jul 24, 2025

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Modelling Polarization Effects in a CdZnTe Sensor at Low Bias.

Jindřich Pipek1, Roman Grill1, Marián Betušiak1

  • 1Institute of Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic.

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|July 8, 2023
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Summary

Pixelated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) sensors can operate in high-flux X-ray environments. This study numerically simulated their performance, optimizing spectral CT detector setups.

Keywords:
CdZnTehigh fluxpolarizationradiation detector

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Radiation Detection

Background:

  • Semi-insulating Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) pixelated sensors are crucial for photon-counting applications like medical computed tomography (CT), airport scanners, and non-destructive testing (NDT).
  • These applications often involve rapidly changing and high-flux X-ray irradiation environments, posing significant operational challenges for detector performance and stability.

Purpose of the Study:

  • To investigate the operational feasibility of CdTe and CdZnTe detectors under high-flux X-ray irradiation using a low electric field.
  • To numerically simulate and analyze electric field profiles, polarization effects, and charge transport phenomena in these detectors.
  • To evaluate the impact of detector electronics on spectral quality and propose optimization strategies for spectral CT applications.

Main Methods:

  • Numerical simulation of coupled drift-diffusion and Poisson's equations to model electric field profiles and charge transport.
  • Pockels effect measurements to visualize electric field profiles under high-flux polarization.
  • Defect model development to consistently depict polarization phenomena.
  • Simulation of X-ray spectrum construction on a 2-mm-thick pixelated CdZnTe detector (330 µm pixel pitch).

Main Results:

  • The study successfully simulated detector performance under high-flux X-ray irradiation with a low electric field, demonstrating satisfactory counting operation.
  • The numerical model accurately depicted polarization effects caused by high flux, correlating with Pockels effect measurements.
  • Analysis revealed the influence of allied electronics on spectral quality, with simulated optimization strategies showing potential for improvement.

Conclusions:

  • Pixelated CdTe and CdZnTe detectors are viable for high-flux X-ray applications requiring stable counting performance.
  • Numerical simulations provide valuable insights into detector physics, enabling the prediction and mitigation of performance limitations like polarization.
  • Optimization of detector setup and associated electronics is key to enhancing spectral resolution and overall performance in spectral CT systems.