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Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging
Jinxu Liu1,2, Jihua Zhang1,2,3, Libin Gao1,2
1School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
Micromachines
|July 8, 2023
Summary
Accurate characterization of through-glass vias (TGVs) is vital for high-frequency 3D packaging. A new transmission matrix (T-matrix) method precisely extracts S-parameters for TGV interconnections up to 40 GHz.
Area of Science:
- Electrical Engineering
- Materials Science
- Semiconductor Packaging
Background:
- High-frequency performance in 3D packaging relies on accurate characterization of vertical interconnections.
- Through-glass vias (TGVs) are increasingly important for advanced semiconductor packaging designs.
- Existing methods may lack precision for complex TGV structures.
Purpose of the Study:
- To develop and validate a precise methodology for S-parameter extraction of TGVs.
- To analyze insertion loss (IL) and reliability of TGV interconnections.
- To enable accurate modeling for high-frequency software package design.
Main Methods:
- Utilized the transmission matrix (T-matrix) method for S-parameter extraction.
- Developed a test structure for coplanar waveguide (CPW) TGVs.
- Employed detailed measurement procedures and equations for analysis.
Main Results:
- Achieved precise S-parameter extraction for various TGV interconnections.
- Demonstrated favorable concurrence between simulated and measured results up to 40 GHz.
- Validated the T-matrix method's effectiveness for TGV analysis.
Conclusions:
- The proposed T-matrix methodology accurately characterizes TGVs for high-frequency applications.
- This method supports the reliable design of 3D glass packaging.
- The findings are applicable to micro-bumps, bond-wires, and various pads in TGVs.
