Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging
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Published on: April 13, 2016
Jinxu Liu1,2, Jihua Zhang1,2,3, Libin Gao1,2
1School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
Abstract:
In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix (T-matrix) to analyze and evaluate the insertion loss (IL) and reliability of TGV interconnections. The method presented herein enables the handling of a diverse range of vertical interconnections, encompassing micro-bumps, bond-wires, and a variety of pads. Additionally, a test structure for coplanar waveguide (CPW) TGVs is constructed, accompanied by a comprehensive description of the equations and measurement procedure employed. The outcomes of the investigation demonstrate a favorable concurrence between the simulated and measured results, with analyses and measurements conducted up to 40 GHz.
