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Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
Guowen Liu1,2, Yu Liu2, Xiao Ma2
1School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310058, China.
Micromachines
|July 8, 2023
Summary
This study optimized all-silicon accelerometer performance by adjusting anchor zone bonding ratios. Decreasing the Si-SiO2 to Au-Si area ratio significantly reduced stress, improving stability and accuracy.
Area of Science:
- MEMS (Micro-Electro-Mechanical Systems)
- Materials Science
- Sensor Technology
Background:
- Stress in the anchor region of all-silicon accelerometers causes nonlinear response signals.
- The ratio of Si-SiO2 bonding area to Au-Si bonding area in the anchor zone influences stress distribution.
- Optimizing this ratio is crucial for enhancing accelerometer performance and stability.
Purpose of the Study:
- To present a novel method for improving all-silicon accelerometer performance.
- To eliminate stress in the anchor region by adjusting bonding area ratios.
- To investigate the impact of anchor-zone area ratios on accelerometer stress and stability.
Main Methods:
- Development of an all-silicon accelerometer model.
- Simulation analysis to generate stress maps under varying anchor-area ratios.
- Experimental validation of optimized anchor-zone ratios.
Main Results:
- Simulation showed significant stress reduction in the anchor zone when the Si-SiO2 to Au-Si area ratio decreased to 0.5.
- Experimental results demonstrated optimized zero-bias full-temperature stability from 133 μg to 46 μg.
- Scale factor full-temperature stability improved from 87 ppm to 32 ppm.
Conclusions:
- Adjusting the Si-SiO2 to Au-Si anchor-zone area ratio is an effective method to reduce stress.
- Optimizing the anchor-zone ratio significantly enhances the full-temperature stability of zero-bias and scale factor.
- The study achieved a 34.6% improvement in zero-bias stability and a 36.8% improvement in scale factor stability.
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