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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter

Wei Wu1, Yansong Li1, Mingkang Yu1

  • 1School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

Micromachines
|July 8, 2023
PubMed

Keywords:
IGBT characteristicsRC-IGBTreverse recovery characteristics

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