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Serial attention to serial memory: The psychological refractory period in forward and backward cued recall
Gordon D Logan1, Simon D Lilburn1, Jana E Ulrich1
1Vanderbilt University, United States.
Abstract:
Guided by the conjecture that memory retrieval is attention turned inward, we examined serial attention in serial memory, combining the psychological refractory period (PRP) procedure from attention research with cued recall of two items from brief six-item lists. We report six experiments showing robust PRP effects in cued recall from memory (1-4) and cued report from perceptual displays (5-6), which suggest that memory retrieval requires the same attentional bottleneck as "retrieval" from perception. There were strong direction effects in each memory experiment. Response time (RT) was shorter and accuracy was higher when the cues occurred in the forward direction (left-to-right, top-to-bottom, first-to-last), replicating differences between forward and backward serial recall. Cue positions had strong effects on RT and accuracy in the memory experiments (1-4). The pattern suggested that subjects find cued items in memory by stepping through the list from the beginning or the end, with a preference for starting at the beginning. The perceptual experiments (5-6) showed weak effects of position that were more consistent with direct access. In all experiments, the distance between the cues in the list (lag) had weak effects, suggesting that subjects searched for each cue from the beginning or end of the list more often than they moved through the list from the first cue to the second. Direction, distance, and lag effects on RT and inter-response interval changed with SOA in a manner that suggested they affect bottleneck or pre-bottleneck processes that create and execute a plan for successive retrievals. We conclude that sequential retrieval from memory and sequential attention to perception engage the same computations and we show how computational models of memory can be interpreted as models of attention focused on memory.
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