Suppression of Visible Emission in Low-Temperature Synthesized Cobalt-Doped ZnO Nanoparticles and Their Photosensing
Ramachandrapanicker Devi Chandra1, Lalan Veena1, Kunnel Gopalan Gopchandran1
1Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram 695581, India.
Abstract:
Cobalt (Co)-doped ZnO nanoparticles have been synthesized at 100 °C using a simple chemical technique, without post-deposition annealing. These nanoparticles are of excellent crystallinity and show a significant reduction in defect density upon Co-doping. By varying the Co solution concentration, it is observed that oxygen-vacancy-related defects are suppressed at lower Co-doping, while the defect density shows an increasing trend at higher doping densities. This suggests that mild doping can significantly suppress the defects in ZnO for electronic and optoelectronic applications. The effect of Co-doping is studied using X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), electrical conductivity, and Mott-Schottky plots. Photodetectors fabricated using pure and Co-doped ZnO nanoparticles show a noticeable reduction in the response time upon Co-doping, which again affirms the reduction in the defect density after Co-doping.
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